40V 340A 0.95mΩ Si Single N-ch Enhancement Mode Power MOSFET with Normal Diode
Description
The PM001N040TG uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
Si Single N-CH Enhancement Mode Power MOSFET
- Rated to 40V at 340Amps @TJ = 25℃
- Max RDS(ON) = 0.95 mΩ.
- Typ RDS(ON) = 0.81 mΩ
- Gate Charge(Typ. Qg = 120 nC)
- 100% Avalanche Tested
Application
- Power switch
- DC/DC converters
[TOLL 8L]
Datasheet
PM001N040TG
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